| PART |
Description |
Maker |
| GM71C4403E-80 GM71C4403ELJ-80 GM71C4403E-60 GM71C4 |
MC 41C 27#20 14#16 PIN PLUG
MB 41C 27#20 14#16 SKT PLUG
Single Output LDO, 1.0A, Adj.(1.295 to 5.5V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85
MB 41C 27#20 14#16 PIN PLUG 1,048,576字×位组织
1,048,576 Words x Bit Organization 1,048,576字×位组织
|
LG Corp.
LG, Corp.
|
| HM514400ALT-7 HM514400ALZ-6 HM514400ALZ-8 HM514400 |
JT 42C 42#22 SKT WALL RECP
1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576字4位动态随机存储器
LJT 37C 37#22D SKT RECP
|
Hitachi,Ltd.
|
| IDT72V71623 IDT72V71623BC IDT72V71623DA IDT72V7162 |
2K x 2K TSI, 16 I/O at 2/4/8 or 16Mbps, Rate-Matching, 3.3V
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 2,048 x 2,048
|
IDT[Integrated Device Technology]
|
| MSM531602E MSM531602E-XXGS-K MSM531602E-XXRS MSM53 |
1,048,576-Word X 16-Bit or 2,097,152-Word x 8-Bit MASKROM 1,048,576字16位或2097152字8MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| IDT72V235L20PFI IDT72V225L20PF IDT72V225L20PFI IDT |
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 3.3伏的CMOS SyncFIFO 256 × 1812 × 18,024 × 18,048 × 18，和4,096 × 18
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 1K X 18 OTHER FIFO, 12 ns, PQFP64
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 3.3伏的CMOS SyncFIFO 256 × 1812 × 181,024 × 18,048 × 18，和4,096 × 18
Dual retriggerable monostable multivibrator with reset 3.3伏的CMOS SyncFIFO 256 × 1812 × 18,024 × 18,048 × 18，和4,096 × 18
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 256 X 18 OTHER FIFO, 10 ns, PQFP64
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 1K X 18 OTHER FIFO, 10 ns, PQFP64
|
Integrated Device Technology, Inc.
|
| IDT7290820BC |
TIME SLOT INTERCHANGE DIGITAL SWITCH 2,048 x 2,048 TELECOM, DIGITAL TIME SWITCH, PBGA100
|
Integrated Device Technology, Inc.
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| KS24C010 KS24C021 KS24C011 KS24C020 |
1.024 / 2.048-BIT SERIAL EEPROM
1,024/2,048-bit serial eeprom 1,024 / 2,048位串行EEPROM
(KS24C010 / KS24C011 / KS24C020 / KS24C021) 1024/2048-bit serial eeprom
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MSC2313258A-XXDS2 MSC2313258A-XXBS2 MSC2313258A |
1048576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
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